| PART |
Description |
Maker |
| UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
1-Mbit (64K x 16) Static RAM
1M x 4 Static RAM
x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM
4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
| CY7C1024DV33-8BGXC |
3-Mbit (128K X 24) Static RAM 128K X 24 STANDARD SRAM, 8 ns, PBGA119
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C109D-10VXI |
1-Mbit (128K x 8) Static RAM 128K X 8 STANDARD SRAM, 10 ns, PDSO32
|
Cypress Semiconductor, Corp.
|
| ST1335 ST1355-CW4 ST1335-BD10 ST1335-BD15 ST1335-B |
5-CONTACT MEMORY CARD IC 272 BIT EEPROM WITH ADVANCED SECURITY MECHANISMS
5V, 3.3V, ISR™ High-Performance CPLDs
NX2LP DEVELOPMENT KIT
KIT DEV MOBL-USB FX2LP18
MoBL® 4-Mbit (256K x 16) Static RAM
MoBL® 1-Mbit (64K x 16) Static RAM
MoBL® 1 Mbit (128K x 8) Static RAM
MoBL® 2-Mbit (128K x 16) Static RAM
(ST1335/13361355) 5-Contact Memory Card IC 272-bit EEPROM with Advanced Security Mechanisms
MoBL® 1-Mbit (64K x 16) Static RAM EEPROM
5V, 3.3V, ISR™ High-Performance CPLDs EEPROM
MoBL® 4-Mbit (256K x 16) Static RAM EEPROM
5-Contact Memory Card IC 272-bit EEPROM with Advanced Security Mechanisms 5，联系记忆卡IC 272位具有高级安全机制的EEPROM
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
ST Microelectronics
STMicroelectronics N.V.
|
| CY7C1009D-10VXI CY7C109D-10VXI CY7C109D-10ZXI CY7C |
1-Mbit (128K x 8) Static RAM
|
Cypress Semiconductor
|
| CY62137CVSL CY62137CVSL-70BAI CY62137CVSL-70BAXI C |
2-Mbit (128K x 16) Static RAM
|
Cypress Semiconductor
|
| CY7C1011CV33-10ZXC CY7C1011CV33-10ZXI CY7C1011CV33 |
2-Mbit (128K x 16) Static RAM
|
Cypress Semiconductor
|
| CY62136CV30LL-70BVXI CY62136CV3006 |
2-Mbit (128K x 16) Static RAM
|
Cypress Semiconductor
|
| CY62137FV1809 |
2-Mbit (128K x 16) Static RAM
|
Cypress Semiconductor
|
| CY62137EV30 CY62137EV30LL-45BVXI CY62137EV30LL-45Z |
2-Mbit (128K x 16) Static RAM
|
Cypress Semiconductor
|
| CY62137FV3009 |
2-Mbit (128K x 16) Static RAM
|
Cypress Semiconductor
|
